Small-signal high frequency characteristics of 4H-SiC MESFET has been studi
ed by using two-dimensional numerical drift-diffusion model in frequency do
main, Non-ideal Schottky boundary conditions have been introduced that take
into account a thin interfacial layer and interface energy states. It has
been demonstrated that the 10 dB/dec small signal current gain roll-off can
be attributed to the existence of high density interface states at the met
al-semiconductor interface. It has been found that as the gate length is re
duced to 0.1 mu m, f(T) and f(max) may reach as high as 30 and 62 GHz, resp
ectively. (C) 2000 Elsevier Science Ltd. All rights reserved.