Analysis of the performance of the quantum wire resonant tunneling field-effect transistor

Authors
Yang, D Khurgin, JB
Citation
D. Yang et Jb. Khurgin, Analysis of the performance of the quantum wire resonant tunneling field-effect transistor, SUPERLATT M, 27(4), 2000, pp. 245-254
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SUPERLATTICES AND MICROSTRUCTURES
ISSN journal
07496036 → ACNP
Volume
27
Issue
4
Year of publication
2000
Pages
245 - 254
Database
ISI
SICI code
0749-6036(200004)27:4<245:AOTPOT>2.0.ZU;2-3
Abstract
We develop a theory of a resonant tunneling through a quantum wire placed i n transverse electric field and show that transistor action can be caused v ia the electric-field-induced changes of the symmetry of electron wavefunct ions. We evaluate the current-voltage characteristics, transconductance and speed of the proposed device and show how they can be further improved by means of bandgap engineering. (C) 2000 Academic Press.