Epitaxial orientation of MBE grown Ru2Si3 films on Si(111) and Si(001)

Authors
Lenssen, D Guggi, D Bay, HL Mantl, S
Citation
D. Lenssen et al., Epitaxial orientation of MBE grown Ru2Si3 films on Si(111) and Si(001), THIN SOL FI, 368(1), 2000, pp. 15-21
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
368
Issue
1
Year of publication
2000
Pages
15 - 21
Database
ISI
SICI code
0040-6090(20000601)368:1<15:EOOMGR>2.0.ZU;2-#
Abstract
Epitaxial, textured Ru2Si3 films were grown by the template technique, a sp ecial molecular beam epitaxy method, on Si(111) and Si(001). Epitaxial rela tionships of the films with respect to the substrate were determined by X-r ay diffraction. Two competing orientations were found on Si(111), while on Si(001) two different orientations of comparable strength are present. The observed orientations will be discussed and possible lattice matchings will be proposed. (C) 2000 Elsevier Science S.A. All rights reserved.