Xj. Meng et al., Dependence of texture development on thickness of single-annealed-layer insol-gel derived PZT thin films, THIN SOL FI, 368(1), 2000, pp. 22-25
PbZr0.5Ti0.5O3 thin films have been prepared on Pt (111)/Ti/SiO2/Si substra
tes by a modified sol-gel technique. The PZT films were annealed layer by l
ayer using a rapid thermal annealing (RTA) method during the spin-coating p
rocess. A novel route was used to obtain PZT films with different single-an
nealed-layer in thickness from the same precursor solution. It is found tha
t the degree of (111) orientation of the films increases with the reduction
thickness of single-annealed-layer. As the thickness of single-annealed-la
yer drops to 40 nm, the film shows a high degree of (111) preferred orienta
tion. The decrease of single-annealed-layer thickness also leads to the inc
rease of the remanent polarization and the dielectric constant. (C) 2000 El
sevier Science S.A. All rights reserved.