Dependence of texture development on thickness of single-annealed-layer insol-gel derived PZT thin films

Citation
Xj. Meng et al., Dependence of texture development on thickness of single-annealed-layer insol-gel derived PZT thin films, THIN SOL FI, 368(1), 2000, pp. 22-25
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
368
Issue
1
Year of publication
2000
Pages
22 - 25
Database
ISI
SICI code
0040-6090(20000601)368:1<22:DOTDOT>2.0.ZU;2-8
Abstract
PbZr0.5Ti0.5O3 thin films have been prepared on Pt (111)/Ti/SiO2/Si substra tes by a modified sol-gel technique. The PZT films were annealed layer by l ayer using a rapid thermal annealing (RTA) method during the spin-coating p rocess. A novel route was used to obtain PZT films with different single-an nealed-layer in thickness from the same precursor solution. It is found tha t the degree of (111) orientation of the films increases with the reduction thickness of single-annealed-layer. As the thickness of single-annealed-la yer drops to 40 nm, the film shows a high degree of (111) preferred orienta tion. The decrease of single-annealed-layer thickness also leads to the inc rease of the remanent polarization and the dielectric constant. (C) 2000 El sevier Science S.A. All rights reserved.