Microstructure and growth modes of stoichiometric NiAl and Ni3Al thin films deposited by r.f.-magnetron sputtering

Citation
P. De Almeida et al., Microstructure and growth modes of stoichiometric NiAl and Ni3Al thin films deposited by r.f.-magnetron sputtering, THIN SOL FI, 368(1), 2000, pp. 26-34
Citations number
38
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
368
Issue
1
Year of publication
2000
Pages
26 - 34
Database
ISI
SICI code
0040-6090(20000601)368:1<26:MAGMOS>2.0.ZU;2-Q
Abstract
Intermetallic thin films of stoichiometric NiAl and Ni3Al have been deposit ed onto n-type silicon (100) and nickel (110) substrates using r.f.-magnetr on co-sputtering. The morphology and crystal structure of the thin films ha ve been studied by transmission electron microscopy from planar-view and cr oss-sectional samples. Chemical order has been assessed using nano-diffract ion techniques. Superlattice reflections confirm a fully ordered structure in both intermetallics. These NiAl and Ni3Al thin films are nanoscaled with an average grain size ranging from 50 to 100 nm and exhibit fiber textures in the (110) and (111)directions when deposited onto silicon. Granular- an d heteroepitaxial relations have been observed when sputtering onto nickel at high substrate temperature. A granular-heteroepitaxial mode of growth ex hibiting the inverse Nishiyama-Wassermann relation (211)[211](B2) \\ (110)[ 110](fcc) is observed in NiAl for the first time, whereas a single-crystall ine heteroepitaxial growth relation of (110)[110](LI2) \\ (110)[110](fcc) i s achieved in Ni3Al. The interface chemistry and surface topography have be en studied by secondary ion mass spectroscopy and scanning tunneling micros copy, respectively, indicating an oxygen-free layer of very low surface rou ghness. The influence of the lattice matching and the deposition parameters on the thin film microstructure and orientation are discussed. (C) 2000 El sevier Science S.A. All rights reserved.