Angular dependences of surface composition, sputtering and ripple formation on silicon under N-2(+) ion bombardment

Authors
Bachurin, VI Lepshin, PA Smirnov, VK
Citation
Vi. Bachurin et al., Angular dependences of surface composition, sputtering and ripple formation on silicon under N-2(+) ion bombardment, VACUUM, 56(4), 2000, pp. 241-245
Citations number
36
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
VACUUM
ISSN journal
0042207X → ACNP
Volume
56
Issue
4
Year of publication
2000
Pages
241 - 245
Database
ISI
SICI code
0042-207X(200003)56:4<241:ADOSCS>2.0.ZU;2-O
Abstract
The correlation between angular dependences of surface composition and sput tering yield of Si by N-2(+) ions was found. It may explain anamalous (in c omparison to Ar+ ion bombardment on Si) sharp increasing of sputtering yiel d at angles of ion incidence over 30 degrees. Angular range of ripple forma tion on Si surface bombarded by 1.5-9 keV N-2(+) ions was measured. It belo ngs to the interval of angles of ion incidence where heterogeneity of surfa ce layers and pronounced changes of sputtering were observed. (C) 2000 Else vier Science Ltd. All rights reserved.