QUANTITATIVE CHARACTERIZATION OF SI SIO2 INTERFACE TRAPS INDUCED BY ENERGETIC IONS BY MEANS OF SINGLE-ION MICROPROBE AND SINGLE-ION BEAM-INDUCED CHARGE IMAGING/

Authors
KOH M IGARASHI K SUGIMOTO T MATSUKAWA T MORI S ARIMURA T OHDOMARI I
Citation
M. Koh et al., QUANTITATIVE CHARACTERIZATION OF SI SIO2 INTERFACE TRAPS INDUCED BY ENERGETIC IONS BY MEANS OF SINGLE-ION MICROPROBE AND SINGLE-ION BEAM-INDUCED CHARGE IMAGING/, Applied surface science, 117, 1997, pp. 171-175
Citations number
22
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
117
Year of publication
1997
Pages
171 - 175
Database
ISI
SICI code
0169-4332(1997)117:<171:QCOSSI>2.0.ZU;2-D
Abstract
The dependence of single ion induced interface traps on the oxide elec tric field during irradiation has been investigated quantitatively by using single ion microprobe (SIMP) and single ion beam induced charge (SIBIC) imaging. The result shows that the number of interface traps i nduced by 2 MeV He ions increases with the dependence of the E-ox(0.2) on the oxide electric field. The dependence of interface traps on the oxide field during ion irradiation has been found to be very similar to that of oxide trapped holes. The cause of the field dependence of i nterface traps has been discussed quantitatively.