CONTROLLED FORMATION OF METAL-SEMICONDUCTOR INTERFACE TO 2DEG LAYER BY IN-SITU ELECTROCHEMICAL PROCESS AND ITS APPLICATION TO INPLANE GATEDELECTRON WAVE-GUIDE DEVICES

Authors
KUDOH T OKADA H HASHIZUME T HASEGAWA H
Citation
T. Kudoh et al., CONTROLLED FORMATION OF METAL-SEMICONDUCTOR INTERFACE TO 2DEG LAYER BY IN-SITU ELECTROCHEMICAL PROCESS AND ITS APPLICATION TO INPLANE GATEDELECTRON WAVE-GUIDE DEVICES, Applied surface science, 117, 1997, pp. 342-346
Citations number
11
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
117
Year of publication
1997
Pages
342 - 346
Database
ISI
SICI code
0169-4332(1997)117:<342:CFOMIT>2.0.ZU;2-J
Abstract
The novel In-situ electrochemical process for formation of metal-semic onductor interface. which have recently been developed by the authors group, is shown to form intimate Schottky contacts to the edges of two -dimensional electron gas (2DEG). Application of this process led to s uccessful formation of novel Schottky in-plane-gate (IPG) controlled A haronov-Bohm (A-B) electron interference device. Clear A-B interferenc e effect was observed at 3.3 K.