Monte Carlo simulation of C-BN electronics transport characteristics

In the paper, according to the energy-band structure of C-BN and specific c haracteristics of polar semiconductor, the main scattering mechanism of C-B N is built, and the physical model applicable to Monte Carlo(MC) simulation is set up. It is the first time that the stable-state electronics transpor t characteristics of bulk C-BN is simulated by single electronics MC method . The variation laws of mean drift velocity, mobility as well as electronic energy with electrical field are obtained respectively. Also, the variatio n laws of electronic energy relaxation time and momentum relaxation time wi th electrical field are obtained respectively.