Negative resistance phenomenon and light emission property of the metal-insulator-semiconductor (Au-SiO2-Si) tunnel junction

The Au-SiO2-Si thin film MIS(Metal-Insulator-Semiconductor) tunnel junction was fabricated. The light emission property and I-V characteristic of this junction were measured and analyzed. Result indicated that the light emiss ion was due to the excitation of Surface Plasmon Polariton(SPP)and the coup le of SPP with the surface roughness subsequently in the MIS system. We obs erved the negative resistance phenomenon(NRP) in the I-V curve of this MIS junction,which was explained by the electrons bonding model. We also got th e AFM(atomic force microscopy) photo of the surface of MIS junction, by whi ch the relation among. the electrons tunneling, the excitation of SPP, and the light emission of the MIS junction was discussed.