ELECTRICAL-PROPERTIES OF FERROELECTRIC BAMGF4 FILMS GROWN ON GAAS SUBSTRATES USING ALGAAS BUFFER LAYER

Ferroelectric BaMgF4 films have been grown on GaAs substrates with and without an AlGaAs buffer layer for metal-ferroelectric-semiconductor field effect transistor (MFSFET) applications. II is: shown that the t emperature range of 530-570 degrees C is suitable to grow the (140)-or iented BaMgF4 films on GaAs. Furthermore, it is demonstrated that the AlGaAs buffer layer is effective to reduce the leakage current. Capaci tance-voltage (C-V) characteristics of Al/BaMgF4/AlGaAs/n-GaAs/n(+)-Ga As(100) structures show a hysteresis loop with a counterclockwise trac e, demonstrating the ferroelectric nature of the BaMgF, film, On the o ther hand, the BaMgF4, film directly grown on GaAs substrates has Cloc kwise-hysteresis loops due to the charge injections. It is also shown that the remanent polarization estimated from the polarization-electri c field (P-E) characteristics is as large as 1.2 mu C/cm(2).