HYSTERESIS CHARACTERISTICS OF VACUUM-EVAPORATED FERROELECTRIC PBZR0.4TI0.6O3 FILMS ON SI(111) SUBSTRATES USING CEO2 BUFFER LAYERS

We demonstrate the ferroelectric behavior of PZT films grown on Si(111 ) substrates by using CeO2 buffer layer. PZT (90 nm) films were prepar ed by electron beam assisted vacuum evaporation system and CeO2 (27 nm ) films were prepared by MBE (molecular beam epitaxy). It is found tha t a hysteresis is not shown in the capacitance-voltage (C-V) character istics of CeO2/Si structures, whereas a hysteresis is obtained in the C-V plot of PZT/CeO2/Si structures, which is due to the ferroelectric nature of the PZT film. In addition, it is shown that the leakage curr ent of PZT/CeO2/Si is as low as 10(-7) A/cm(2) at 8 V.