PREPARATION OF PBZRXTI1-XO3 LA1-XSRXCOO3 HETEROSTRUCTURES USING THE SOL-GEL METHOD AND THEIR ELECTRICAL-PROPERTIES/

PbZrxTi1-xO3(PZT)/La1-xSrxCoO3(LSCO) heterostructures were grown on Mg O(100) substrates using the sol-gel technique and their structural and electrical properties were investigated. X-ray diffraction analysis s howed that the PZT/LSCO film was polycrystalline with partial preferre d (001)/(100) orientations. Fairly good ferroelectric properties of PZ T were obtained when the PZT films were deposited on a well-crystalliz ed LSCO film and were annealed at 700 degrees C for 1 min. A typical v alue of the remnant polarization was 28 mu C/cm(2). It was also found that a longer annealing time enhanced the interdiffusion of constituen t elements between LSCO and PZT. It is concluded from these results th at in sol-gel processing, prevention of interdiffusion and crystallini ty of the LSCO electrode film are two important factors for obtaining the desirable structural and electrical properties in this system.