HIGH-ENERGY ION-BEAM ANALYSIS OF FERROELECTRIC THIN-FILMS

The composition and crystalline quality of ferroelectric thin films fo rmed on Pt covered MgO(100) substrates have been investigated with com bined use of O-16(alpha,alpha)O-16 3.045 MeV resonant backscattering a nd channelling techniques, Oxygen depth profiling has been estimated b y the resonant backscattering, and crystalline quality was estimated b y the channelling method. The ferroelectric thin films of PbTiOy (PTO) and La-modified PTO (PbxLa1-xTiOy; PLT) (y approximate to 3) oi 750 A ngstrom thick were formed on Pt covered MgO substrates by multi-target ion beam sputtering method with introducing oxygen gas, Pt thin films beneath the film due to the under-electrode were also fabricated by t he same method. For both PTO and PLT films, depth profiling of Pb and Ti elements showed relatively constant concentrations for whole film t hicknesses, whereas the oxygen concentrations varied drastically, The extent of variation of oxygen concentration was larger for the PTO fil m than for the PLT film. This led to better crystalline quality of PLT , compared with PTO, The effect of oxygen depth profiling and crystall ine quality on the electric properties is also discussed.