SELF-ALIGNING PHENOMENA OF ZNCDSE ISLANDS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS(110) SURFACE CLEAVED IN ULTRA-HIGH-VACUUM

Self-organized formation of islands has been investigated for the grow th of Zn0.7Cd0.3Se on thr GaAs(110) surface cleaved in ultra high vacu um by molecular beam epitaxy. We found. for the first time, phenomena that the self-organized Zn1-xCdxSe islands aligned in lung-range up to several tens of mu m on GaAs(110) surface. Two types of surface struc tures were observed, pyramidal-shaped islands and elongated triangular ridges. The islands were selectively grown on the top of the ridges a long [1 (1) over bar 0] direction. The ridges were presumably caused b y the anisotropic in-plane strain relaxation of the epilayers un the ( 110)-oriented substrate, The periodic strain distributions on the ridg es are suggested to account for the arrangement of the islands.