DEPENDENCE OF DEFECT GENERATION AND STRUCTURE ON INTERFACE CHEMISTRY IN ZNSE GAAS/

0Formation of Zn-As and Ga2Se3-like interfacial layers are suggested b y transmission electron microscopy in ZnSe films grown on Zn-exposed G aAs-(2 X 4) and Se-exposed GaAs-(4 X 6) surfaces, respectively. The de nsities of As precipitates and extrinsic Shockley-type stacking faults in the films increase as the surface coverage of c(4 X 4) reconstruct ion increased on the Zn-exposed As-stabilized GaAs surfaces. On the ot her hand, the densities of stacking faults in ZnSe/GaAs increase as a function of Se interaction or contamination on the surfaces of the GaA s epilayers. In these samples, intrinsic Frank- and extrinsic Shockley -type stacking faults bound by anion and cation-terminated partial edg e dislocations are generated, respectively.