THIN-FILM CAF2 STABILIZING EFFECT ON SINGLE-CRYSTAL DIAMOND SURFACE

Authors
YUN Y MAKI T KOBAYASHI T
Citation
Y. Yun et al., THIN-FILM CAF2 STABILIZING EFFECT ON SINGLE-CRYSTAL DIAMOND SURFACE, Applied surface science, 117, 1997, pp. 570-573
Citations number
5
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
117
Year of publication
1997
Pages
570 - 573
Database
ISI
SICI code
0169-4332(1997)117:<570:TCSEOS>2.0.ZU;2-J
Abstract
A metal/insulator/semiconducting (MIS) diamond structure employing SrT iO3/CaF2 composite film as a gate insulator was fabricated and its ele ctrical properties were investigated by C-V measurement. In the C-V cu rve, the Al/SrTiO3/CaF2/diamond MIS structure exhibited high capacitan ce as well as reduction of the surface state on the diamond state. In addition, the temperature gradient method during the deposition of SrT iO3 film was very effective to obtain the crack-free composite film of SrTiO3/CaF2 composite structure.