RELAXATION OF BAND BENDING ON GAAS(001) SURFACE BY CONTROLLING THE CRYSTAL DEFECTS NEAR-THE-SURFACE

Authors
HIROTA Y WATANABE Y MAEDA F OGINO T
Citation
Y. Hirota et al., RELAXATION OF BAND BENDING ON GAAS(001) SURFACE BY CONTROLLING THE CRYSTAL DEFECTS NEAR-THE-SURFACE, Applied surface science, 117, 1997, pp. 619-623
Citations number
16
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
117
Year of publication
1997
Pages
619 - 623
Database
ISI
SICI code
0169-4332(1997)117:<619:ROBBOG>2.0.ZU;2-I
Abstract
The influence of crystal defects near the surface on horizontal Bridgm an-grown GaAs(001) surface is investigated by photoluminescence (PL) a nd synchrotron radiation photoelectron spectroscopy (SRPES). PL measur ements reveal that after heating to 500 degrees C a layer with lower d efect concentration exists just under the thermal degraded one. SRPES shows that the surface Fermi level (E-FS) moves to the conduction band minimum when this thermally degraded layer is removed by chemically e tching and the etched surface is heated in ultra-high vacuum after rin sing with the deoxygenated and deionized water. These results suggest that the position of E-FS for GaAs(001) surface is strongly affected b y crystal defects near the surface.