INVESTIGATION OF SPUTTERED INDIUM-TIN OXIDE SILICON INTERFACES - ION DAMAGE, HYDROGEN PASSIVATION AND LOW-TEMPERATURE ANNEAL/

Authors
KUWANO K ASHOK S
Citation
K. Kuwano et S. Ashok, INVESTIGATION OF SPUTTERED INDIUM-TIN OXIDE SILICON INTERFACES - ION DAMAGE, HYDROGEN PASSIVATION AND LOW-TEMPERATURE ANNEAL/, Applied surface science, 117, 1997, pp. 629-633
Citations number
8
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
117
Year of publication
1997
Pages
629 - 633
Database
ISI
SICI code
0169-4332(1997)117:<629:IOSIOS>2.0.ZU;2-O
Abstract
Sputtered indium tin oxide (ITO)/Si contacts reveal a reduced interfac ial barrier on n-Si and an increase on p-Si as expected from ion damag e. Deep level transient spectroscopy (DLTS) identifies three electron traps (0.10, 0.19 and 0.25 eV) in n-Si and a single hole trap at 0.20 eV in p-Si with concentrations approximate to 2-5 x 10(12) cm(-3) Pre- hydrogenation of wafers in a plasma greatly reduces the DLTS signal, o ffering first. evidence of in-situ passivation of sputter damage by at omic hydrogen. Low-temperature anneal (180 degrees C, 12-24 h) of the ITO sputter damage and influence of illumination during anneal appear to favor possible defect anneal by recombination-assisted processes.