PROPERTIES OF SILICON DOPED SILICON DIOXIDE THIN-FILMS DEPOSITED BY COSPUTTERING OF SILICON AND SILICON DIOXIDE

The effect of annealing on silicon doped SiO2 films was studied by X-r ay diffraction, electron spin resonance (ESR) and Fourier transform ph otoluminescence (FTPL, 30 to 300 K). FTPL was not observed from as-dep osited samples bur annealed samples showed FTPL at room temperature ce ntred at about 900 nm and also an anomalous variation of thr FTPL inte nsity with temperature. ESR measurements showed the presence of g = 2. 003 and g = 2.006 centres. implications of the results will be discuss ed in thr context that silicon crystallites were formed due to the ann ealing.