A. Sandhu et al., PROPERTIES OF SILICON DOPED SILICON DIOXIDE THIN-FILMS DEPOSITED BY COSPUTTERING OF SILICON AND SILICON DIOXIDE, Applied surface science, 117, 1997, pp. 634-637
Citations number
8
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
The effect of annealing on silicon doped SiO2 films was studied by X-r
ay diffraction, electron spin resonance (ESR) and Fourier transform ph
otoluminescence (FTPL, 30 to 300 K). FTPL was not observed from as-dep
osited samples bur annealed samples showed FTPL at room temperature ce
ntred at about 900 nm and also an anomalous variation of thr FTPL inte
nsity with temperature. ESR measurements showed the presence of g = 2.
003 and g = 2.006 centres. implications of the results will be discuss
ed in thr context that silicon crystallites were formed due to the ann
ealing.