DEVELOPMENT OF SINGLE-ION IMPLANTATION - CONTROLLABILITY OF IMPLANTEDION NUMBER

The current status of developing single-ion implantation (SII) which e nables us to implant dopant ions one by one into fine semiconductor re gions is summarized. Single-ions extracted from a focused ion beam (FI B) have been implanted into a nuclear track detector CR-39 and the ave rage number of implanted ions by chopping the ion beam has been evalua ted by counting the etch pits on the CR-39 formed by each single-ion i ncidence. The detection efficiency of the single-ion incidence into a target has also been evaluated by comparing the count of secondary ele ctrons and the implanted ion number, and the controllability of implan ted ion number by SII is discussed.