T. Shinada et al., DAMAGE AND CONTAMINATION FREE FABRICATION OF THIN SI WIRES WITH HIGHLY CONTROLLED FEATURE SIZE, Applied surface science, 117, 1997, pp. 684-689
Citations number
13
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
For the precise control of the electrical conductivity in Si ultrafine
structures by single ion implantation (SII), silicon wires with well-
defined patterns have been successfully fabricated without introducing
damages and contaminations by combining a focused Si ion beam irradia
tion with the anisotropic etching of Si crystal in a hydrazine-water s
olution. A silicon ion beam irradiation enhanced the etching rate of t
he thermally grown SiO2 overlayer on SIMOX (separation by implanted ox
ygen) Si in HF-water solution. The top-Si was subsequently etched by t
he hydrazine-water solution with the patterned SiO2 film as a mask. It
was confirmed by the four point probe measurement that our technique
had no influence on the electrical properties of the Si wires.