ANALYSIS OF INDIUM SURFACE SEGREGATION IN MOLECULAR-BEAM EPITAXY OF INGAAS GAAS QUANTUM-WELLS/

Pseudomorphic InGaAs/GaAs quantum wells (QWs) were grown by molecular beam epitaxy (MBE) under various growth conditions. Surface segregatio n of indium atoms during MBE growth influenced the QW structures, and the evidence was measured by a secondary ion mass spectroscopy and a l ow temperature photoluminescence. Calculated results based on a kineti c model of the surface segregation were compared with experimental one s. It was found that the change of InGaAs/GaAs heterointerface due to the surface segregation can be almost predicted by a kinetic model, an d a segregation energy could be estimated.