Defect generation in polycrystalline Cn(In, Ga)Se-2 by high-energy electron irradiation

Citation
A. Jasenek et al., Defect generation in polycrystalline Cn(In, Ga)Se-2 by high-energy electron irradiation, APPL PHYS A, 70(6), 2000, pp. 677-680
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN journal
09478396 → ACNP
Volume
70
Issue
6
Year of publication
2000
Pages
677 - 680
Database
ISI
SICI code
0947-8396(200006)70:6<677:DGIPCG>2.0.ZU;2-S
Abstract
We investigate the degradation of ZnO/CdS/ Cu(In, Ga)Sez heterojunction sol ar cells for space applications and the defect generation in polycrystallin e Cu(In, Ga)Se-2 thin films irradiation with 1-MeV electrons with fluences phi(e) up to phi(e) = 5 x 10(18) cm(-2). Notable degradation of the solar c ell performance starts at fluences of phi(e) = 10(17) cm(-2) where the open circuit voltage decreases by about 5% while short circuit current and fill factor remain essentially unaffected. Thus, Cu(In, Ga)Se-2 solar cells wit hstand electron fluences which are higher by one order of magnitude or more when compared to other technologies. A model describes the absolute open c ircuit voltage loss considering the increase of space charge recombination by electron irradiation-induced defects. Defect analysis by admittance spec troscopy shows that acceptor defects with an energy distance of approximate ly 300 meV from the valence band are generated at. a rate gamma = 0.017 (+/ -0.01) cm(-1).