Optimization of growth of InGaAs/InP quantum wells using photoluminescenceand secondary ion mass spectrometry

InGaAs/InP quantum wells of widths varying from 19 Angstrom to 150 Angstrom have been grown by MOVPE and the growth temperature optimized using photol uminescence and SIMS, It was thus found that for a 78 Angstrom well the low est PL linewidth of 12.7 meV at 12 K was obtained for growth at 625 degrees C. SIMS also showed sharpest interfaces for this temperature compared with growth at 610 degrees C and 640 degrees C, The well widths determined from PL energies were in good agreement with a growth rate of 8.25 Angstrom/s. However, while the barrier widths of 150 Angstrom were in agreement with SI MS results, the well widths from SIMS were found to be much larger, doe to a lower sputtering rate of InGaAs compared with InP, Quantitative compariso n was made assuming the presence of InAsP and InGaAsP interface layers on e ither side of the wells and the relative sputtering rates determined.