Band structure of semiconducting rhenium silicide

Authors
Migas, DB Shaposhnikov, VL Filonov, AB Dorozhkin, NN Borisenko, VE
Citation
Db. Migas et al., Band structure of semiconducting rhenium silicide, DAN BELARUS, 44(1), 2000, pp. 54-56
Citations number
13
Categorie Soggetti
Multidisciplinary
Journal title
DOKLADY AKADEMII NAUK BELARUSI
ISSN journal
0002354X → ACNP
Volume
44
Issue
1
Year of publication
2000
Pages
54 - 56
Database
ISI
SICI code
0002-354X(200001/02)44:1<54:BSOSRS>2.0.ZU;2-A
Abstract
Theoretical findings supporting semiconducting properties of the ReSi1.75 p hase were originally obtained by ab initio Linear muffin-tin orbital method . The material was shown to be a narrow-gap semiconductor with indirect tra nsition value of 0.16 eV. The first direct transition with appreciable osci llator strength at 0.30 eV is predicted.