1200nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions

Authors
Coldren, CW Larson, MC Spruytte, SG Harris, JS
Citation
Cw. Coldren et al., 1200nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions, ELECTR LETT, 36(11), 2000, pp. 951-952
Citations number
3
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
11
Year of publication
2000
Pages
951 - 952
Database
ISI
SICI code
0013-5194(20000525)36:11<951:1GVCLE>2.0.ZU;2-1
Abstract
Elemental source molecular beam epitaxy has been used to grow vertical cavi ty laser diodes on GaAs substrates that employ GaInNAs multiquantum well ac tive regions and AlAs/GaAs distributed Bragg reflectors. The laser diodes e mitted light at 1200nm and had threshold current densities of 2.5kA/cm(2) a nd efficiencies of 0.066W/A under room temperature pulsed operation.