Ch. Chang et al., High CW power narrow-spectral width (< 1.5 angstrom) 980 nm broad-stripe distributed-feedback diode lasers, ELECTR LETT, 36(11), 2000, pp. 954-955
100 mu m-stripe, broad-waveguide InGaAs/InGa(As)P/GaAs DFB diode lasers (la
mbda = 976nm) have been realised which exhibit narrow spectral widths (full
width at half maximum) of 0.5 and 1.3 Angstrom at CW powers of 0.5 and 1W,
respectively. 5/95% facet-coated devices have been realised which have an
external differential quantum efficiency of 52% and a wallplug efficiency o
f 33% at 1W.