High CW power narrow-spectral width (< 1.5 angstrom) 980 nm broad-stripe distributed-feedback diode lasers

Authors
Chang, CH Earles, T Botez, D
Citation
Ch. Chang et al., High CW power narrow-spectral width (< 1.5 angstrom) 980 nm broad-stripe distributed-feedback diode lasers, ELECTR LETT, 36(11), 2000, pp. 954-955
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
11
Year of publication
2000
Pages
954 - 955
Database
ISI
SICI code
0013-5194(20000525)36:11<954:HCPNW(>2.0.ZU;2-1
Abstract
100 mu m-stripe, broad-waveguide InGaAs/InGa(As)P/GaAs DFB diode lasers (la mbda = 976nm) have been realised which exhibit narrow spectral widths (full width at half maximum) of 0.5 and 1.3 Angstrom at CW powers of 0.5 and 1W, respectively. 5/95% facet-coated devices have been realised which have an external differential quantum efficiency of 52% and a wallplug efficiency o f 33% at 1W.