High-power AlGaInAs strained multiquantum well lasers operating at 1.52 mum

Authors
Newell, TC Varangis, PM Pease, E Stintz, A Liu, GT Malloy, KJ Lester, LF
Citation
Tc. Newell et al., High-power AlGaInAs strained multiquantum well lasers operating at 1.52 mum, ELECTR LETT, 36(11), 2000, pp. 955-956
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
11
Year of publication
2000
Pages
955 - 956
Database
ISI
SICI code
0013-5194(20000525)36:11<955:HASMWL>2.0.ZU;2-E
Abstract
1.75W CW power in AlGaZnAs/InP strained QW lasers is demonstrated. Room tem perature threshold current densities are 410A/cm(2), and the characteristic temperature is 69K. The variation in the external differential efficiency with cavity length and temperature reveal the optimum length and show how n onradiative recombination mechanisms limit the performance.