Aging behaviour of AlGaN/GaN HFETs with advanced ohmic and Schottky contacts

Authors
Hilsenbeck, J Nebauer, E Wurfl, J Trankle, G Obloh, H
Citation
J. Hilsenbeck et al., Aging behaviour of AlGaN/GaN HFETs with advanced ohmic and Schottky contacts, ELECTR LETT, 36(11), 2000, pp. 980-981
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
11
Year of publication
2000
Pages
980 - 981
Database
ISI
SICI code
0013-5194(20000525)36:11<980:ABOAHW>2.0.ZU;2-#
Abstract
The thermal degradation behaviour of AlGaN/GaN HFETs with advanced source/d rain and gate metallisations is reported. Using electrical and XRD measurem ents, it is demonstrated that HFETs with barrier-containing Ti/Al/Ti/Au/WSi N ohmic and the Ir/Au Schottky contacts are stable during aging at 500 degr ees C up to 120h.