UV-emitting diode composed of transparent oxide semiconductors: p-SrCu2O2/n-ZnO

Authors
Ohta, H Kawamura, K Orita, M Sarukura, N Hirano, M Hosono, H
Citation
H. Ohta et al., UV-emitting diode composed of transparent oxide semiconductors: p-SrCu2O2/n-ZnO, ELECTR LETT, 36(11), 2000, pp. 984-985
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
11
Year of publication
2000
Pages
984 - 985
Database
ISI
SICI code
0013-5194(20000525)36:11<984:UDCOTO>2.0.ZU;2-P
Abstract
A UV-emitting diode composed of a hetero-SrCu2O2/ZnO pit junction was fabri cated by pulsed laser deposition (PLD). On injecting an electrical current through a pn heterojunction of p-SrCu2O2/n-ZnO, an emission peak centred at 387 nm was observed, originating from excitons or the electron hole plasma in ZnO.