New generation 1200V power module with trench gate IGBT and super soft recovery diode and its evaluations

A 1200V IGBT with trench gate and punch through structures is developed on the basis of simulation and experimental analyses. Both results of simulati on and measurement of the prototype device have good agreement. Though the chip area of the new IGBT is about 30-50% smaller than that of the conventi onal IGBT, the saturation voltage is about 30-40% lower, the switching loss is also about 20% smaller than those of conventional IGBT, respectively, a nd the new IGBT has a larger reverse bias safe operating area (RBSOA). Capa bility to withstand short circuits is achieved by a new current limiting ci rcuit. In addition, a fast switching diode with an excellent soft recovery characteristic is practically developed by using local lifetime control pro cessing in the anode side n(-)-layer. As an experimental result, its power dissipation, spike surge voltage and electromagnetic noise can be lowered. The structures and characteristics of the developed IGBT, diode and power m odule are presented, and their analytical results are discussed and evaluat ed from a practical and an applications point of view.