Light-hadron induced SER and scaling relations for 16-and 64-Mb DRAMS

Authors
Hofman, GJ Peterson, RJ Gelderloos, CJ Ristinen, RA Nelson, ME Thompson, A Ziegler, JF Mullfeld, H
Citation
Gj. Hofman et al., Light-hadron induced SER and scaling relations for 16-and 64-Mb DRAMS, IEEE NUCL S, 47(2), 2000, pp. 403-407
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
47
Issue
2
Year of publication
2000
Part
2
Pages
403 - 407
Database
ISI
SICI code
0018-9499(200004)47:2<403:LISASR>2.0.ZU;2-M
Abstract
We report on soft error rates (SER) of 16 and 64 Mb dynamic memory chips in duced by three types of elementary particles, neutrons, protons, and pions, with emphasis on results obtained with pion beams. Significant SER differe nces, up to a factor 1000, are seen between various manufacturers and cell technologies. We discuss reaction mechanisms and by comparing SER rates to nuclear reaction cross sections present guidelines for predicting failure r ates.