A number of fast, wafer-level test methods exist for interconnect reliabili
ty evaluation. The relative abilities of four such methods to detect the qu
ality and reliability of the interconnect over very short test times are ev
aluated in this work. Four different test structure designs are also evalua
ted, and the results are compared with package-level median time to failure
(MTF) results. The Isothermal test method combined with Standard Wafer-Lev
el Electromigration Accelerated Test (SWEAT)-type test structures is shown
to be the most suitable combination for defect detection and interconnect r
eliability control over short test times.