Improved method for the oxide thickness extraction in MOS structures with ultrathin gate dielectrics

Authors
Ghibaudo, G Bruyere, S Devoivre, T DeSalvo, B Vincent, E
Citation
G. Ghibaudo et al., Improved method for the oxide thickness extraction in MOS structures with ultrathin gate dielectrics, IEEE SEMIC, 13(2), 2000, pp. 152-158
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
ISSN journal
08946507 → ACNP
Volume
13
Issue
2
Year of publication
2000
Pages
152 - 158
Database
ISI
SICI code
0894-6507(200005)13:2<152:IMFTOT>2.0.ZU;2-K
Abstract
An improved method for the assessment of the oxide thickness applicable to advanced CMOS technologies is proposed. To this end, a proper combination o f Maserjian's technique and of Vincent's method is used to alleviate the un known parameter inherent to both extraction procedures and which depends on the employed carrier statistics. The new method has been successfully appl ied to various technologies with gate oxide thickness ranging from 7 nm to 1.8 nm.