Scanning tunnelling microscopy study of the charge-density wave in Hf-doped 1T-TaS2

Citation
H. Bando et al., Scanning tunnelling microscopy study of the charge-density wave in Hf-doped 1T-TaS2, J PHYS-COND, 12(19), 2000, pp. 4353-4363
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN journal
09538984 → ACNP
Volume
12
Issue
19
Year of publication
2000
Pages
4353 - 4363
Database
ISI
SICI code
0953-8984(20000515)12:19<4353:STMSOT>2.0.ZU;2-B
Abstract
The effect of doping with Hf atoms on the nearly commensurate (NC) charge-d ensity-wave (CDW) structures of 1T-TaS2 was investigated using scanning tun nelling microscopy (STM) at room temperature, for levels of substitution of Hf for Ta up to 6.9%. It was found that the Hf atom introduces a point def ect to the CDW superlattice at the CDW domain boundary for lower contents. For Hf contents higher than 1%, the CDW superlattice melted and a distorted structure was observed instead of the usual CDW superlattice. The change o f the CDW structure observed by STM was compared with the change of the rho -T characteristics.