Aluminium nitrides growth film in a triode plasma system over a varying cathode current density scale

Citation
E. De Silva et W. Ahmed, Aluminium nitrides growth film in a triode plasma system over a varying cathode current density scale, MICROEL ENG, 51-2, 2000, pp. 27-33
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
51-2
Year of publication
2000
Pages
27 - 33
Database
ISI
SICI code
0167-9317(200005)51-2:<27:ANGFIA>2.0.ZU;2-J
Abstract
Intensified plasma assisted processing is a novel method that uses a triode discharge system to intensify the glow discharge. In this project, this sy stem was investigated across a range of variables to confirm the optimum op erating parameters. The aluminium nitride coatings produced by this method were characterized using scanning electron microscopy (SEM), electron dispe rsion spectroscopy (EDS) and surface micro-hardness tests. The result obtai ned showed that at the optimum level the aluminium nitride films had a grai n size of 8 nm. The hardness in comparison with similar films produced by o ther traditional plasma processes showed a superior quality. The current re sults will be directed to establishing ideal parameters for operation. (C) 2000 Elsevier Science B.V. All rights reserved.