E. Prokhorov et al., Anomalous behavior of the pulse transfer characteristic of a selectively doped AlxGa1-xAs/GaAs heterostructure containing deep traps, MICROEL ENG, 51-2, 2000, pp. 165-170
The pulse transfer characteristic of a normal selectively doped AlxGa1-xAs/
GaAs heterostructure containing deep traps in the AlxGa1-xAs layer is consi
dered. It is shown that these deep traps are responsible for an undershoot
in the drain-source current at the end of a positive voltage pulse applied
to the gate (the pulse voltage is measured from the initial gate bias) and
the trap depth can be determined from this undershoot. (C) 2000 Elsevier Sc
ience B.V. All rights reserved.