Type-I and type-II transitions in electroluminescence spectra of GaAs/AlAsmonolayer multiquantum-well structures

Authors
Kovac, J Pudis, D Satka, A Janos, L Jakabovic, J Schwabe, R Gottschalch, V Benndorf, G Rheinlander, B
Citation
J. Kovac et al., Type-I and type-II transitions in electroluminescence spectra of GaAs/AlAsmonolayer multiquantum-well structures, MICROEL ENG, 51-2, 2000, pp. 309-316
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
51-2
Year of publication
2000
Pages
309 - 316
Database
ISI
SICI code
0167-9317(200005)51-2:<309:TATTIE>2.0.ZU;2-O
Abstract
We have investigated the temperature dependence of type-I and type-II optic al transitions in electroluminescence spectra from type-II (GaAs)(n)/(AlAs) (m) multiquantum-well structures embedded in InAlP confinement layers. The experimental results confirm a thermally assisted up-conversion of electron s from the AlAs conduction band X-point into the energetically higher lying quantized GaAs Gamma-states. This process yields to a remarkable enhanceme nt of the radiative type-I recombination in the type-II structures. (C) 200 0 Elsevier Science B.V. All rights reserved.