Excitonic effects of InAs monolayers in GaAs/AlGaAs-microcavities

We report on optical investigations of differently spaced multiple InAs-mon olayers in weak-finesse GaAs/AlGaAs-microcavities. The excitonic properties of the monolayer stacks were studied on non-resonant structures. The energ ies of the monolayer-induced transitions were determined by photoluminescen ce. Photocurrent measurements at different p-n junction electric fields sho w Stark ladder transitions as well as Quantum confined Stark effect. The op tical properties of the resonant cavity-structures were investigated by pol arized reflection; photoluminescence-, and photocurrent-measurements and sp ectroscopic ellipsometry. We have studied the coupling between cavity- and exciton mode dependent on the degree of tuning by varying the angles of inc idence and applied electric fields. (C) 2000 Elsevier Science B.V. All righ ts reserved.