Temperature dependent effective ionization coefficient for Si

Analytical expressions for temperature dependence of breakdown voltage and on-resistance of Si p + n diodes are derived successfully by employing the temperature dependent effective ionization coefficient and mobility in Si. The analytical results are compared with numerical simulations. The variati on of the on-resistance with temperature is also compared with the one repo rted previously. Good fits with the numerical results are found for the bre akdown voltage within 10% in error for the doping concentration in the rang e of 10(14)-10(17) cm(-3). (C) 2000 Elsevier Science B.V. All rights reserv ed.