Study of velocity field characteristics in pseudomorphic Si0.8Ge0.2 p-channel metal-oxide-semiconductor field effect transistor

In this work we report on the enhanced mobility and high electric field cha racteristics of SiGe p-channel MOSFETs. In the low electric field regime, t he devices exhibit effective mobility three times greater than comparable s tandard Si devices. To determine accurate hole transport characteristics, a n analytical modelling of these devices is implemented that takes into acco unt the source drain resistance and short channel effects. (C) 2000 Elsevie r Science B.V. All rights reserved.