The ferroelectric BaTiO3(001) ultrathin film (10 nm) was grown epitaxially
on SrTiO3(001) substrate by laser molecular beam epitaxy (MBE). The growth
process of the BaTiO3 thin film was characterized by in situ intensity osci
llation of reflection high energy electron diffraction, showing a unit cell
layer-by-layer growth mode. The atomically smooth surface of BaTiO3 film h
as been observed by atomic force microscopy with a root mean square surface
roughness of 0.2 nm. The top-most surface for the high c-oriented BaTiO3 t
hin film was analyzed by angle-resolved X-ray photoelectron spectroscopy (A
RXPS), indicating the BaTiO3 film is predominantly terminated with TiO2 ato
mic plane. (C) 2000 Elsevier Science B.V. All rights reserved.