Growth and surface analysis of BaTiO3 ultrathin film fabricated by laser molecular beam epitaxy

Citation
Df. Cui et al., Growth and surface analysis of BaTiO3 ultrathin film fabricated by laser molecular beam epitaxy, MICROEL ENG, 51-2, 2000, pp. 601-604
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
51-2
Year of publication
2000
Pages
601 - 604
Database
ISI
SICI code
0167-9317(200005)51-2:<601:GASAOB>2.0.ZU;2-T
Abstract
The ferroelectric BaTiO3(001) ultrathin film (10 nm) was grown epitaxially on SrTiO3(001) substrate by laser molecular beam epitaxy (MBE). The growth process of the BaTiO3 thin film was characterized by in situ intensity osci llation of reflection high energy electron diffraction, showing a unit cell layer-by-layer growth mode. The atomically smooth surface of BaTiO3 film h as been observed by atomic force microscopy with a root mean square surface roughness of 0.2 nm. The top-most surface for the high c-oriented BaTiO3 t hin film was analyzed by angle-resolved X-ray photoelectron spectroscopy (A RXPS), indicating the BaTiO3 film is predominantly terminated with TiO2 ato mic plane. (C) 2000 Elsevier Science B.V. All rights reserved.