Capacitance-Voltage (C-V) characterization of 20 angstrom thick gate oxide: parameter extraction and modeling

This paper reports the Capacitance-Voltage (C-V) characterization of gate o xide in the 20 Angstrom thickness range, dealing especially with quantum an d polysilicon effects. In the first part, the basis of Poisson-Schrodinger modeling is summarized. The extraction procedure of doping level, flat band voltage, threshold voltage, and oxide thickness is presented. A simple met hod to extract the polysilicon doping level and to correct for polysilicon effect on C(V) curves is proposed. These parameter extraction procedures ar e illustrated by experimental data obtained on both NMOS and PMOS transisto rs. (C) 2000 Elsevier Science Ltd. All rights reserved.