Atomically smooth ultrathin oxide on Si(113)

Authors
Mussig, HJ Dabrowski, J Hinrich, S
Citation
Hj. Mussig et al., Atomically smooth ultrathin oxide on Si(113), MICROEL REL, 40(4-5), 2000, pp. 577-579
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
40
Issue
4-5
Year of publication
2000
Pages
577 - 579
Database
ISI
SICI code
0026-2714(200004/05)40:4-5<577:ASUOOS>2.0.ZU;2-A
Abstract
We report the first direct observation of dissociative chemisorption of O-2 molecules on a Si surface. We link this to our other new observation that smooth oxide layers can be grown easily on Si(113). The initial oxidation i s discussed in terms of surface diffusion paths and surface stress. Ab init io calculations help elucidate the favored adsorption sites and the oxidati on mechanism. (C) 2000 Elsevier Science Ltd. All rights reserved.