Determination of the electrical properties of thermally grown ultrathin nitride films

The aim of this work is to obtain the electrical properties of a leaky 2 nm ultrathin thermally grown nitride film using the classical HF C(V) measure ments. The substrate Si (100) surface cleaned in UHV is nitrided in a low p ressure of nitric oxide (NO) gas at 1050 degrees C, This film is characteri zed by Auger electron spectroscopy (AES), fourier transform infra red spect roscopy (FTIR), transmission electron microscopy (TEM) and electron energy loss spectrum (EELS), The deposition of a self-assembled insulating monolay er of organic molecules (octadecyltrichlorosilane) on the nitride gives ris e to a metal-insulator-semiconductor (MIS) structure, which permits to obta in the electrical properties of the ultrathin nitride film, (C) 2000 Elsevi er Science Ltd. All rights reserved.