Annealing effects in the PECVD SiO2 thin films deposited using TEOS, Ar and O-2 mixture

Authors
Viana, CE Morimoto, NI Bonnaud, O
Citation
Ce. Viana et al., Annealing effects in the PECVD SiO2 thin films deposited using TEOS, Ar and O-2 mixture, MICROEL REL, 40(4-5), 2000, pp. 613-616
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
40
Issue
4-5
Year of publication
2000
Pages
613 - 616
Database
ISI
SICI code
0026-2714(200004/05)40:4-5<613:AEITPS>2.0.ZU;2-W
Abstract
In this work, we present the results obtained on the characterization of si licon oxide thin films deposited by plasma enhanced chemical vapor depositi on (PECVD) using a mixture of tetraethylorthosilicate (TEOS), oxygen and ar gon. The electrical characteristics of the implemented MOS capacitors, afte r the annealing process (600 degrees C), showed an increase in the break-do wn strength as well as the effective charge density. (C) 2000 Elsevier Scie nce Ltd. All rights reserved.