Atmospheric pressure chemical vapour deposition films of borophosphosilicat
e glass with different contents of phosphorus and boron can be successfully
used as masks for etching of silicon in KOH solution. The optical properti
es of these films were pointed out by spectroellipsometric measurements, us
ing different theoretical models (such as Cauchy and Wemple-DiDomenico mode
ls). (C) 2000 Elsevier Science Ltd. All rights reserved.