Tetraethylorthosilicate SiO2 films deposited at a low temperature

In this work, we present the results obtained on the characterization of si licon oxide thin films deposited by plasma enhanced chemical vapor depositi on using tetraethylorthosilicate (TEOS) as a silicon source. The influence of the reaction kinetics in the deposition process was analyzed. The RF pow er enhances the O* generation in the plasma increases the TEOS oxidation pr ocess in the gas phase. Also, the oxidation reaction and sub-products elimi nation, from the surface during solid phase reaction, are improved. The waf er holder temperature contributes to the volatile sub-products elimination from the substrate surface. There is no evidence of SI-OH and OH bonds in t he Fourier transform infrared spectra from the films deposited above 300 de grees C. The densification process improved the electrical characteristics of the film showing an elimination of the trapped charges promoted by the t hermal treatment. (C) 2000 Elsevier Science Ltd. All rights reserved.