Wet or dry ultrathin oxides: impact on gate oxide and device reliability

In this study, wet and dry oxidation processes for 3.5 nm ultrathin dielect rics are compared in terms of oxide and device reliability. It is demonstra ted that a wet oxidation enables to strongly improve the oxide lifetime. On the contrary, the device reliability has been found to be slightly affecte d by the process choice. Finally, these results associated with charge pump ing and stress induced leakage current measurements indicate that the bulk oxide, more than the Si/SiO2 interface, is affected by the growth process a mbience (wet or dry oxidation). (C) 2000 Elsevier Science Ltd. All rights r eserved.